Infineon is the market leader in highly efficient solutions for power generation, power supply and power consumption. The latest generation of Infineon’s MOSFET transistors were designed to ensure market leading performance, improve efficiency and to achieve better thermals in terms of the state of the art EMI behavior.
Power MOSFET frequently asked questions and answers 1. Introduction This technical note provides several important questions regarding the use of MOSFETs and the platforms required. Although it is focused on automotive applications, the principles can apply to industrial and consumer applications. Dec 15, 2016 Many of the most common power MOSFET applications involve devices, in either half- or full-bridge configurations, driving inductive loads. Buck-converter topologies are a typical example. The high-side FET operates with a duty cycle D approximately equal to A typical buck converter topology.
AC-DC applications requiring high-voltage blocking capability and fast switching with low losses take advantage of the revolutionary CoolMOS™ superjunction technology for more efficient power supplies. Infineon’s superjunction MOSFETs serve today's and especially tomorrow’s trends in different topologies, ranging from a simple flyback to TCM Totem Pole PFC. Designers benefit from a lower temperature, the improved form factor, and increased efficiency.
Power Fet Transistors
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
Power Fet Transistor Socket
- Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit.
- Mode MOSPOWER FET is in switching power (or voltage) to grounded (ground return) loads. OT drive the FET properly, the gate voltage must be referenced to its source. For enhancement-mode MOSFETs, this gate potential is of the same polarity as the MOSFET's drain voltage. To turn on, the n-channel MOSFET requires a positive.